? 2004 ixys all rights reserved g = gate d = drain s = source tab = drain ds99197a(9/04) polarht tm hiperfet power mosfet ixfh 52n30p v dss = 300 v ixfv 52n30p i d25 = 52 a ixfv 52n30ps r ds(on) 66 m ? ? ? ? ? t rr 250 ns advanced technical information n-channel enhancement mode fast recovery intrinsic diode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic diode advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 1000 a r ds(on) v gs = 10 v, i d = 0.5 i d25 66 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gs continuous 20 v v gsm transinet 30 v i d25 t c = 25 c52a i dm t c = 25 c, pulse width limited by t jm 150 a i ar t c = 25 c52a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body for 10s 250 c f c mounting force 11...65/2.5...111 n/lb m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6.0 g plus220 5.0 g g d s to-247 (ixfh) (tab) g s d (tab) plus220smd (ixfv__s) g s d plus220 (ixfv)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 52n30p ixfv 52n30p ixfv 52n30ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 20 30 s c iss 3490 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 550 pf c rss 130 pf t d(on) 24 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 22 ns t d(off) r g = 4 ? (external) 60 ns t f 20 ns q g(on) 110 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 25 nc q gd 53 nc r thjc 0.31 k/w r thck 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 52 a i sm repetitive 150 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, v gs = 0 v, 160 250 ns q rm di/dt = -100 a/ s, v r = 0 v 800 nc i rm 7a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 d1 l l3 l1 e1 e e b d c a2 a1 a l2 terminals: 1 - gate 2 - drain 3 - source tab - drain e1 e l2 d l3 l l1 3x b 2x e c a2 a1 a e1 d1 plus220 (ixfv) outline l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1 - gate 2 - drain 3 - source tab - drain e e1 d l2 a a1 l1 l l3 e 2x b c a2 l4 a3 e1 plus220smd (ixfv__s) outline
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 25 50 75 100 125 150 0 5 10 15 20 25 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 45 50 55 012345678910 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 45 50 55 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 4. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 52a i d = 26a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 0 25 50 75 100 125 150 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v ixfh 52n30p ixfv 52n30p ixfv 52n30ps
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 52n30p ixfv 52n30p ixfv 52n30ps fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 q g - nanocoulombs v g s - volts v ds = 150v i d = 26a i g = 10ma fig. 7. input adm ittance 0 10 20 30 40 50 60 70 80 90 100 44.5 55.5 66.5 77.5 8 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 0 10 2030 405060 7080 90100 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 25 50 75 100 125 150 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. for w ar d-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 25s 1ms dc t c = 25oc r ds (on) limit 10ms
? 2004 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) ixfh 52n30p ixfv 52n30p ixfv 52n30ps
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